Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

Trigonometric Widths and Best N-Term Approximations of the Generalized Periodic Besov Classes BΩp,θ

In this paper,we determine the estimates exact in order for the trigonometric widths and the best n-term trigonometric approximations of the generalized classes of periodic functions BΩp,θ in the space Lq for some values of parameters p,q.     

A novel optical polarimeter based on the signal width measurement of the waveform

For the optical polarimeter based on the structure of polarizer–Faraday modulator–analyzer, a novel method of optical rotation measurement was proposed by the waveform analysis of optical intensity signals. The calculation method of the optical rotation was provided by measuring the signal width of the waveform. Furthermore, the optical rotations of sugar solutions with different concentrations were measured by this method, and the fitting degree of obtained fitting curve is 0.9996. This showed that this method was effective.     

n,p柱宽度对超结SiGe功率二极管电学特性的影响

结合SiGe材料的优异性能与超结结构在功率器件方面的优势,提出了一种超结SiGe功率二极管.该器件有两个重要特点:一是由轻掺杂的p型柱和n型柱相互交替形成超结结构,取代传统功率二极管的n^-基区;二是阳极p⁺区采用很薄的应变SiGe材料.该二极管可以克服常规Si p⁺n^-n⁺功率二极管存在的一些缺陷,如阻断电压增大的同时,正向导通压降随之增大,反向恢复时间也变长.利用二维器件模拟软件MEDICI仿真 关键词： 超结 锗硅二极管 n p柱宽度 电学特性     

聚焦部分相干涡旋光束作用于不同折射率瑞利粒子上的辐射力

 使用聚焦部分相干高斯谢尔涡旋光束,对不同折射率的瑞利粒子的辐射力做了分析,着重研究了相关长度和束腰宽度对辐射力和俘获稳定性的影响。结果表明：相关长度和束腰宽度分别存在临界值,相干长度小于等于其临界值或束腰宽度大于等于其临界值时,可利用其俘获相对折射率大于1的微粒;而在相关长度大于其临界值或束腰宽度小于其临界值时,可利用其俘获相对折射率小于1的微粒。对俘获稳定性的分析表明,需选择适当的相关长度和束腰宽度才能稳定俘获瑞利粒子。     

平顶高斯超短脉冲激光的时间部分相干性对相干合成的影响

 利用准单色光干涉理论,计算了2×2平顶高斯超短脉冲激光在远场的干涉图样,分析了激光的时间部分相干性及其存在束间相位差时对相干合成的影响。计算结果表明,当单路激光输出光束线宽小于100 nm时,理想波前的远场光斑图样和峰值光强基本保持不变,当光束线宽大于100 nm时,干涉减弱衍射效应逐渐增强;光束间存在相位差时,时间部分相干性将破坏远场图样随束间相位差的周期性变化,相位差越大干涉越弱;当超过相干长度时,则为非相干合成,但1/6倍相干长度范围内,仍可视为较理想的相干合成,此时焦斑的斯特列尔比大于0.9,对超短脉冲的相干合成影响可忽略。     

测量行波管电子注的法拉第筒的热分析

利用ANSYS软件对测量行波管电子注截面的法拉第筒探头进行了热分析研究.分析了在单脉冲情况下,测量各种直径的不同脉冲功率密度的电子注、不同脉冲宽度对法拉第筒温度的影响,研究了测量不同功率密度的电子注可以使用的脉冲宽度.结果表明,仅法拉第筒上的注斑区域温度迅速上升,温度梯度较大,其它部分温度基本不变,为保证法拉第筒能够持...     

Optical switching and logic gates with hybrid plasmonic-photonic crystal nanobeam cavities

We propose a hybrid resonance architecture in which a plasmonic element is coupled to a silicon-on-insulator photonic crystal nanobeam cavity operating at telecom wavelengths. It benefits from the combined characteristics of the photonic cavity and the plasmonic element, and exploits the unique properties of Fano resonances resulting from interactions between the continuum and the localized cavity states. As confirmed through 3D time-domain simulations, a strong cavity mode damping by the plasmonic element offers mechanisms of controlling a probe signal propagating in the nanobeam. It makes possible to create optical switching devices and logic gates relying on any optical nonlinear effect.     

多光子偏振态与单光子高维空间态之间的相互变换及其应用

基于一种特殊的控制非门,实现多光子偏振态与单光子空间高维态之间的相互变换,使得对多光子偏振态的操作可以通过对单光子的操作来完成,由此可以实现任意多光子正定算符值测量和多光子任意幺正操作.这种实现方式是以一定概率完成的,但其效率要优于此前的方案,在目前的实验条件下是可行的. 关键词： 单光子空间态 特殊控制非门 线性光学多端口干涉仪     

一种考虑IGBT基区载流子注入条件的物理模型

提出了一种考虑绝缘栅极双极晶体管(insulated gate bipolar transistor,IGBT) 基区载流子不同注入条件的物理模型. 在小注入和大注入情况下,分别建立描述IGBT基区载流子运动的输运方程(ambipolar transport equation,ATE),并确定边界条件. 采用傅里叶级数法求解载流子输运方程,并将计算结果分别与IGBT手册提供的实验数据和Hefner模型计算结果相比较,验证了本文提出物理模型的正确性. 关键词： 绝缘栅极双极晶体管 物理模型 注入条件 双极输运方程